Effect of composition on the bonding environment of In in InAIN and InGaN epilayersKATSIKINI, M; PINAKIDOU, F; PALOURA, E. C et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 11, pp 2593-2597, issn 1862-6300, 5 p.Conference Paper

Self-regulating mechanism of InN growth on GaN(0001) by molecular beam epitaxy; from nanostructures to filmsDIMAKIS, E; ILIOPOULOS, E; TSAGARAKI, K et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 7, pp 1686-1690, issn 1862-6300, 5 p.Conference Paper

Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applicationsKALAITZAKIS, F. G; ILIOPOULOS, E; KONSTANTINIDIS, G et al.Microelectronic engineering. 2012, Vol 90, Num Feb, pp 33-36, issn 0167-9317, 4 p.Conference Paper

Spontaneous growth of III-nitride nanowires on Si by molecular beam epitaxyVAJPEYI, A. P; AJAGUNNA, A. O; TSIAKATOURAS, G et al.Microelectronic engineering. 2009, Vol 86, Num 4-6, pp 812-815, issn 0167-9317, 4 p.Conference Paper

Growth optimization of an electron confining InN/GaN quantum well heterostructureDIMAKIS, E; ILIOPOULOS, E; KAYAMBAKI, M et al.Journal of electronic materials. 2007, Vol 36, Num 4, pp 373-378, issn 0361-5235, 6 p.Article

AlGaN/GaN high electron mobility transistor sensor sensitive to ammonium ionsALIFRAGIS, Y; VOLOSIRAKIS, A; CHANIOTAKIS, N. A et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 6, pp 2059-2063, issn 1862-6300, 5 p.Conference Paper

Complex ordering in ternary wurtzite nitride alloysILIOPOULOS, E; LUDWIG, K. F; MOUSTAKAS, T. D et al.The Journal of physics and chemistry of solids. 2003, Vol 64, Num 9-10, pp 1525-1532, issn 0022-3697, 8 p.Conference Paper

Combination chemotherapy with cyclophosphamide, adriamycin, and vincristine in malignant thymoma and myasthenia gravisKOSMIDIS, P. A; ILIOPOULOS, E; PENTEA, S et al.Cancer. 1988, Vol 61, Num 9, pp 1736-1740, issn 0008-543XArticle

High electron mobility transistors based on the AlN/GaN heterojunctionADIKIMENAKIS, A; ARETOULI, K. E; ILIOPOULOS, E et al.Microelectronic engineering. 2009, Vol 86, Num 4-6, pp 1071-1073, issn 0167-9317, 3 p.Conference Paper

Strain relaxation in AIN/GaN heterostructures grown by molecular beam epitaxyDIMITRNKOPULOS, G. P; KOMNINOU, Ph; KARAKOSTAS, Th et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 11, pp 2569-2572, issn 1862-6300, 4 p.Conference Paper

Raman and transmission electron microscopy characterization of InN samples grown on Gan/Al₂O₃ by molecular beam epitaxyARVANITIDIS, J; KATSIKINI, M; VES, S et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 7, pp 1588-1593, issn 0370-1972, 6 p.Conference Paper

Atomic simulations and HRTEM observations of a Σ 18 tilt grain boundary in GaNKIOSEOGLOU, J; BERE, A; KOMNINOU, Ph et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 5, pp 799-803, issn 0031-8965, 5 p.Conference Paper

Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001)DIMAKIS, E; TSAGARAKI, K; ILIOPOULOS, E et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 367-372, issn 0022-0248, 6 p.Conference Paper

GaN photodiodes grown by MBE on HVPE and ELO-HVPE GaN\sapphire substratesSAMPATH, A. V; ILIOPOULOS, E; SETH, K et al.SPIE proceedings series. 2000, pp 311-318, isbn 0-8194-3565-1Conference Paper